Si4830ADY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
10
T J = 150 °C
1
0.1
30 V
T J = 25 °C
24 V
0.01
0.001
0.0001
0
25
50
75
100
125
150
1
0.0
0.3
0.6
0.9
1.2
1.5
T J - Temperat u re (°C)
Reverse Current vs. Junction Temperature
200
160
120
8 0
40
0
C oss
V F - For w ard V oltage Drop ( V )
Forward Voltage Drop
0
6
12
1 8
24
30
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72021 .
www.vishay.com
6
Document Number: 72021
S09-0868-Rev. G, 18-May-09
相关PDF资料
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相关代理商/技术参数
SI4830CDY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4830CDY-T1-E3 功能描述:MOSFET 30V 8.0A 2.9W 20mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4830CDY-T1-GE3 功能描述:MOSFET 30V 8A / 8A DUAL NCH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
Si4830-Demo 制造商:Silicon Laboratories Inc 功能描述:SI4830 STANDALONE DEMONSTRATION AND EVALUATION BOARD. - Boxed Product (Development Kits)
SI4830DY 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4830DY-E3 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4830DY-T1 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4830DY-T1-E3 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube